DEPARTMENTS
Dr. Venu Anand
Dr. Venu Anand

Assistant Professor Grade I

Office Address:

ECED-1 : 202, Department of Electronics and Communication Engineering National Institute of Technology Calicut, Kerala, India

Contact no:

+914952286703

Home Address:

  • B-Tech, GEC Kozhikode

  • MSc(Engineering), IISc Bangalore

  • PhD, IISc Bangalore

  • Educational Qualifications

    • B-Tech, GEC Kozhikode

    • MSc(Engineering), IISc Bangalore

    • PhD, IISc Bangalore

    Journals

    • Anjana J.G., Venu Anand and  Aswathi R. Nair, Surface potential based modeling of zinc oxynitride thin film transistors, IOP Flexible and Printed Electronics, Vol. 7, 2022, p. 035004
    • Anbuselvan, K.K.N., Anand, V., Krishna, Y. and Rao, M.G, Spectroscopic investigations on impurities and their effect on the electron number density in the shock tube, Journal of Quantitative Spectroscopy and Radiative Transfer, Vol 272, 2021, p.107744
    • Anand, V., Thomas, R., Raman, K.T. and Gowravaram, M.R., 2019. Plasma-Induced Polymeric Coatings. In Non-Thermal Plasma Technology for Polymeric Materials (pp. 129-157). Elsevier.
    • Ghosh, M., Anand, V. and Gowravaram, M.R., 2018. Wetting characteristics of vertically aligned graphene nanosheets. Nanotechnology, 29(38), p.385703.
    • Anand, V., Nair, A., Karur Karunapathy Nagendirakumar, A. and Gowravaram, M.R., 2018. Estimating the number density and energy distribution of electrons in a cold atmospheric plasma using optical emission spectroscopy. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(4), p.04F407.
    • Anand, V., Nair, A.R., Shivashankar, S.A. and Mohan Rao, G., Atmospheric pressure plasma chemical vapor deposition reactor for 100 mm wafers, optimized for minimum contamination at low gas flow rates. Applied Physics Letters, 107(9), p.094103, 2015.
    • Shaik, H. , Anand, V. and Rao, G.M. On the quality of hydrogenated amorphous silicon deposited by sputtering. Materials Science in Semiconductor Processing, 26, pp.367-373, 2014.
    • Mathew, A., Anand, V., Rao, G.M. and Munichandraiah, N., Effect of iodine concentration on the photovoltaic properties of dye sensitized solar cells for various I2/LiI ratios. Electrochimica Acta, 87, pp.92-96, 2013.
    • Anand, V., Ghosh, S., Ghosh, M., Rao, G.M., Railkar, R. and Dighe, R.R., Surface modification of PDMS using atmospheric glow discharge polymerization of tetrafluoroethane for immobilization of biomolecules. Applied Surface Science, 257(20), pp.8378-8384, 2011.
    • Patra, S., Dash, S., Anand, V., Nimisha, C.S., Rao, G.M. and Munichandraiah, N., Electrochemical co-deposition of bimetallic Pt–Ru nanoclusters dispersed on poly (3, 4-ethylenedioxythiophene) and electrocatalytic behavior for methanol oxidation. Materials Science and Engineering: B, 176(10), pp.785-791, 2011.
    • Anand, V. and Gowravaram, M.R., On the purity of atmospheric glow-discharge plasma. IEEE Transactions on Plasma Science, 37(9), pp.1811-1816, 2009.

    Conferences

    • Anjana, J.G. and Anand, V, Two Dimensional Numerical Simulation of Zinc Oxy-Nitride Thin Film Transistors, International Conference on Electronics and Sustainable Communication Systems (ICESC), 2020, pp. 1052-1055
    • Aswathi R. Nair, Venu Anand and Sanjiv Sambandan, “Bias stress induced threshold voltage shift in buckled thin film transistors,” In 2019 IEEE Region 10 Conference (TENCON 2019), pp.78-81, 17-20 Oct. 2019.

    Professional Experience

    • Scientist B, NSTL, DRDO

    • Research Associate, IISc

    Plasma Processing                           

    'Plasma', the fourth state of matter, is an essential part of the unit processes associated with microelectronic device fabrication. Our group aims to develop Cold Atmospheric Plasma (CAP) as a viable microfabrication technology. This entails fluid dynamic simulations, High voltage generation, High voltage instrumentation etc.

    Thinfilm Transistos (TFTs)

    TFTs are non-classical MoSFETs based on non-silicon materials. Our goup is interested in the charge transport and photoresponse of TFTs using ZnON and MoS2 as the active materials. The work entails analytical modeling, CAD simulations,  Fabrication and Characterization of TFTs using the facilities available at NIT Calicut and other centres.

    1. Title: Development of zinc oxynitride based thindilm transistos for photosensing applications
    Funding agency and scheme: NIT Calicut, Faculty Research Grant, 2019
    Status: Ongoing

    2. Title: Development of a diagnostic tool for Cold Atmospheric Plasma
    Funding agency and scheme: SERB- Startup Research Grant, 2021
    Status: Ongoing

    Basic Electrical Sciences (Theory; B.Tech) 

    Digital Circuits and Systems (Theory & lab; B.Tech)

    Electronic Circuits I (Theory & Lab; B.Tech)

    Electronics Circuits II (Theory & Lab; B.Tech)

    Electronic Instrumentation (Theory; B.Tech)

    Nanoelectronics (Theory; BTech)

    Electronic Packaging (Theory; M.Tech VLSI & EDT)

    Related to Plasma Processing

    Simulation

    COMSOL Multiphysics

    MATLAB

    Experimental

    Vacuum chambers

    High voltage powers supplies

    High voltage probe

    High speed multimeter

    Related to Microfabrication

    Simulation

    Silvaco TCAD

    Experimental (fabrication)

    Multi target RF Sputtering system

    Single target DC Sputtering system

    Thermal Evaporation system

    Fume hood

    Substrate Annealing and Cleaning facilities

    Experimental (characterization)

    DC Probe station