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    Dr. C. Periasamy
    Dr. C. Periasamy

    Associate Professor

    Office Address:

    ECE1 : 303

    Contact no:

    Email ID:

    cperiasamy@nitc.ac.in

    Home Address:

    Peraiyur, Madurai (Dist) Tamil Nadu-625703

  • PhD (Indian Institute of Technology (IIT-Varanasi))

    • Educational Qualifications

    • PhD (Indian Institute of Technology (IIT-Varanasi))

    Design and Development of MEMS and Biosensor

    Journals

    Selected Publications (IEEE)

    1. Arathy Varghese, C. Periasamy, and Lava Bhargava "Fabrication and pH-sensitivity Analysis of MOS-HEMT Dimensional Variants for Bio-sensing Applications" IEEE Transactions on NanoBioscience, VOL. 20, NO. 1, JANUARY 2021. https://doi.org/10.1109/TNB.2020.3023725, (SCI, (IF: 2.935) ).
    2. Arathy Varghese, C. Periasamy, Lava Bhargava, Surani Bin Dolmanan, and Sudhiranjan Tripathy "Fabrication and Modeling based Performance Analysis of Circular GaN MOSHEMT based Electrochemical Sensors,  IEEE Sensor Journal, Volume :21, pp-4216, 2021 (IEEE). https://doi.org/10.1109/JSEN.2020.3032175, (SCI, (IF: 3.301) ).
    3. Nawaz Shafi, Chitrakant sahu, and C.Periasamy "Analytical Modeling of Surface Potential and Figure of Merit Computation for Planar Junctionless pH Sensing BioFET(Accepted for Publication)" IEEE Transactions on Nanotechnology Volume :20 / 534-542 / 2021 (IEEE) https://doi.org/10.1109/TNANO.2021.3089717, (SCI, (IF: 2.57) ).
    4. Aasif Mohammad Bhat, Nawaz Shafi, Chitrakant sahu, and C.Periasamy "AlGaN/GaN HEMT pH Sensor Simulation Model and its Maximum Transconductance Considerations for Improved Sensitivity” IEEE Sensors Journal (Early Acess)  Volume :[] / 1-1 / 2021 (IEEE) https://doi.org/10.1109/JSEN.2021.3100475 (SCI, (IF: 3.301) ).
    5.  Aasif Mohammad Bhat, Nawaz Shafi, Chitrakant sahu, and C.Periasamy "Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate", IEEE/TMS Journal of Electronic Materials Volume :[50]  / 2021 (IEEE), (DOI: 10.1007/s11664-021-09151-9"  (SCI, (IF: 1.938) ).
    6. Arun Kishor Johar,Gaurav Kumar Sharma, Tangudu Bharat Kumar, Tarun Varma, C. Periasamy, Ajay Agarwal, D. Boolchandani "Optimization of Flexible Film Bulk Acoustic Resonator based Toluene Gas Sensor. https://doi.org/10.1007/s11664-021-09059-4 IEEE/TMS Journal of Electronic Materials Volume :  50, pages 5387–5395, 2021 (IEEE), (SCI, (IF: 1.938) ).
    7. Sharma, Niketa, Singh, Kuldeep,Chaturvedi, Nitin, Chauhan, Ashok, C, Periasamy, Kharbanda, Prajapat, Priyavart, Dheeraj, Khanna, P, Chaturvedi, Nidh ,"High Resolution AlGaN/GaN HEMT based Electrochemical Sensor for Biomedical Applications" , IEEE Transactions on Electron Devices, Volume :67, pp- 289-295, 2020, ISBN: 1557-9646, DOI: https://doi.org/10.1109/TED.2019.2949821. (SCI, (IF: 2.917) ).
    8. Niketa Sharma, C.Periasamy, Nidhi Chaturvedi and Nitin Chaturvedi "Trapping effects on leakage and current collapse in AlGaN/GaN HEMTs" TMS/IEEE Journal of Electronic Materials  volume 49, pages5687–5697(2020) https://doi.org/10.1007/s11664-020-08299-0, (SCI, (IF: 1.938) ).
    9. Nawaz Shafi, Chitrakant sahu, and C.Periasamy ,Analytical Modeling of Surface Potential and Drain Current for Virtually Doped Symmetrical Dielectric Modulated BioFET, IEEE Sensor Journal, Volume: 20, pp-4749-4757, May-2020, DOI: https://doi.org/10.1109/JSEN.2020.2964625, (SCI, (IF: 3.301) )
    10. Arun K. Johar, Tarun Varma, C. Periasamy, Ajay Agarwal and D. Boolchandani ,"Design, Analysis and Finite Element Modeling of Solidly Mounted Film Bulk Acoustic Resonator for Gas Sensing Applications" , IEEE/TMS Journal of Electronic Materials, Volume :49, pp- 1503–1511, Dec-2020, DOI: https://doi.org/10.1007/s11664-019-07843-x, (SCI, (IF: 1.938) ).
    11. Arathy Varghese, C.Periasamy, Lava Bhargava, Surani Bin Dolmanan and Sudhiranjan Tripathy ,"Linear and Circular AlGaN/AlN/GaN MOS-HEMT based pH Sensor on Si Substrate: A Comparative Analysis " , IEEE Sensors Letters Volume:3 , Issue: 4 , pp-4500404, April 2019. DOI: https://doi.org/10.1109/LSENS.2019.2909291.
    12.  Nawaz Shafi, Chitrakant sahu, and C.Periasamy ,"Fabrication and pH Sensitivity Analysis of in-situ Doped Polycrystalline Silicon Thin Film Junctionless BioFET" , IEEE Electron Device Letters, Volume: 40, pp-997-1000, June- 2019. DOI: https://doi.org/10.1109/LED.2019.2911334. (SCI, (IF: 4.187) ).
    13. Lintu Rajan, C. Periasamy, Vineet Sahula ,"An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts" , IEEE Sensor Journal, Volume: 19, pp- 3232 - 3239, May-2019, DOI: https://doi.org/10.1109/JSEN.2019.2893025, (SCI, (IF: 3.301) ).
    14. Chandra Prakash Gupta, Shashi Kant Sharma, Basanta Bhowmik, K. T. Sampath, C. Periasamy and Sandeep Sancheti ,"Development of Highly Sensitive and Selective Ethanol Sensors Based on RF Sputtered ZnO Nanoplates" ,    IEEE Journal of Electronic Materials,  Volume: 48, pp- 3686–3691, March-2019, https://doi.org/10.1007/s11664-019-07127-4 (SCI, (IF: 1.938) ).
    15. Arathy Varghese, C. Periasamy, and Lava Bhargava ,"Fabrication and Charge Deduction based Sensitivity Analysis of GaN MOS-HEMT Device for Glucose, MIG, c-erbB-2, KIM-1 and PSA Detection" , IEEE Transactions on Nanotechnology Volume: 18, pp. 747 - 755, July 2019, DOI: https://doi.org/10.1109/TNANO.2019.2928308, (SCI, (IF: 2.57) ).
    16. Arathy Varghese, C. Periasamy, Lava Bhargava ,"Analytical Modeling and Simulation Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection" , IEEE Sensors Journal , Volume: 18 , Issue: 23 , Dec.1, 1 2018, Page(s): 9595 – 9603, DOI: https://doi.org/10.1109/JSEN.2018.2871718. (SCI, (IF: 3.301) )
    17. Lintu Rajan, C. Periasamy, Vijayakumar. K, and Vineet Sahula ,"An Investigation on Electrical and Hydrogen Sensing Characteristics of RF Sputtered ZnO Thin-Film With Palladium Schottky Contacts" , IEEE Sensors Journal, Vol. 17, pp.14-21, 2017,  DOI: https://doi.org/10.1109/JSEN.2016.2620185, (SCI, (IF: 3.301) )
    18. Shashikant Sharma, B. Bhowmik, Vipin Pal and C Periasamy, "Electrical and Low Temperature Methanol Sensing Properties of RF Sputtered n-ZnO/p-Si Heterojunction Diodes" , IEEE Sensors Journal, Vol.17, pp. 7332 - 7339, Nov-2017, DOI: https://doi.org/10.1109/JSEN.2017.2754542, (SCI, (IF: 3.301) ).
    19. L. Rajan, C. Periasamy and Vineet Sahula, ,"Comprehensive Study on Electrical and Hydrogen Gas Sensing Characteristics of Pt/ZnO Thin Film Based Schottky Diodes Grown on n-Si Substrates by RF sputtering", IEEE Transactions on Nanotechnology, Vol. 15, pp. 201 - 208, March-2016. https://DOI:10.1109/TNANO.2015.2513102 (SCI, (IF: 2.57) ).
    20. Shashikant Sharma, Bernhard C. Bayer, VieraSkakalova, Ghanshyam Singh and C. Periasamy," Structural, Electrical and UV Detection Properties of ZnO/Si Heterojunction Diodes", IEEE Transactions on Electron Devices Vol.63, pp. 1949 - 1956, May-2016. https://DOI:10.1109/TED.2016.2540721, (SCI, (IF: 2.917) ).
    21. C. Periasamy and P. Chakrabarti "“Tailoring the Structural and Optoelectronic Properties of Al-Doped Nanocrystalline ZnO Thin Films” " IEEE- Journal of Electronic Materials,(SCI, Impact Factor:1.79) Volume :40 / 259-266 / 2011 ISBN: 0361-5235 (IEEE), (SCI, (IF: 1.938) ).

     

    Journal Publications (SCI )

    1. Bhat, A.M., Shafi, N., Poonia, R. et al. Design and Analysis of a Field Plate Engineered High Electron Mobility Transistor for Enhanced Performance. J. Electron. Mater. (2022). https://doi.org/10.1007/s11664-022-09646-z.
    2. Poonia, R., Bhat, A.M., C. Sahu and C.Periasamy, “Performance Analysis of MOS-HEMT as a Biosensor: A Dielectric Modulation Approach”. Silicon (2022). https://doi.org/10.1007/s12633-022-01742-3.
    3. Nawaz Shafi, Aasif Mohamad Bhat, Jaydeep Singh Parmar, Chitrakant Sahu, C. Periasamy,Effect of geometry and temperature variations on sensitivity and linearity of junctionless pH sensing FET: An experimental study, Micro and Nanostructures,Volume 163,2022,107186,ISSN 2773-0123, https://doi.org/10.1016/j.spmi.2022.107186.
    4.  Shafi, N., Bhat, A.M., Parmar, J.S. C. Sahu and C.Periasamy “Biologically Sensitive FETs: Holistic Design Considerations from Simulation, Modeling and Fabrication Perspectives”. Silicon (2022). https://doi.org/10.1007/s12633-022-01709-4 2021.
    5. Aasif Mohammad Bhat, Arathy Varghese, Nawaz Shafi, and C.Periasamy "A Dielectrically Modulated GaN/AlN/AlGaN MOSHEMT with a Nanogap Embedded Cavity for Biosensing Applications" IETE Journal of Research (Taylor and Francis) Volume :1 / 1-10 / 2021. https://doi.org/10.1080/03772063.2020.1869593, (SCI, (IF: 2.333) ).
    6. Shafi N., Sahu C., Periasamy C. "Gate All Around Junctionless Dielectric Modulated BioFET Based Hybrid Biosensor" Silicon (2020). https://doi.org/10.1007/s12633-020-00583-2. (SCI, (IF: 2.670) ).
    7. Shafi, N., Bhat, A.M., Parmaar, J.S., Porwal, A., Sahu, C. and Periasamy, C., 2021. Virtually Doped Schottky Buried Metal Layer Planar Junctionless FET for SCE Suppression at sub-28nm Technology Nodes. Silicon, pp.1-13. https://doi.org/10.1007/s12633-021-01242-w, (SCI, (IF: 2.670) ).
    8. Arathy Varghese, C. Periasamy, and Lava Bhargava ,"Dielectric Modulated Underlap based AlGaN/AlN/GaN MOS-HEMT for Label Free Bio-detection " , Journal of Nanoelectronics and Optoelectronics ,Volume: 48, pp. 1064-1071(8), July 2019, DOI: https://doi.org/10.1166/jno.2019.2605, (SCI, (IF: 1.069) ).
    9. C . Periasamy and Arathy Varghese ,"Design and fabrication of AlGaN/GaN high electron mobility transistors for biosensing applications" , CSI Transactions on ICT, Volume: 07, pp. 187–190 , May 2019, https://doi.org/10.1007/s40012-019-00233-y. (NA).
    10. N. Sharma, C. Periasamy and N. Chaturvedi , " Refined Isolation Techniques for GaN-Based High Electron Mobility Transistors",  Journal of Materials Science in Semiconductor Processing. Elsevier , Volume 87, 15, Pages 195-201, July-2018 DOI: https://doi.org/10.1016/j.mssp.2018.05.015, (SCI, (IF: 3.927) ).
    11. Arun K. Johar, Raju Patel, C. Periasamy, Ajay Agarwal and D. Boolchandani ,"FEM Modeling and Simulation of SMFBAR Sensor with PIB as Sensing layer for Tetrachloroethane (PCE) Gas Detection" , Materials Research Express (IOP science) Volume :6 , pp- 015033 , October 2018,  DOI: https://doi.org/10.1088/2053-1591/aae73a, (SCI, (IF: 1.620) ).
    12. Nawaz Shafi, Chitrakant sahu, and C.Periasamy ,"Virtually doped SiGe tunnel FET for enhanced sensitivity in biosensing applications" , Superlattices and Microstructures (Impact Factor: 2.123) Elsevier, Volume :120, pp-75-89, 2018, DOI: https://doi.org/10.1016/j.spmi.2018.05.006, (SCI, (IF: 2.658) ).
    13. Tarun Varma, C. Periasamy and D. Boolchandani, "Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing,” Superlattices and Microstructures, Elsevier , Volume 114, Pages 284-295, February 2018,  DOI: https://doi.org/10.1016/j.spmi.2017.12.054, (SCI, (IF: 2.658) ).
    14. Arathy Varghese, C. Periasamy, Lava Bhargava and K. Vijayakumar, "Impact of AlN interlayers in epitaxial and passivation scheme on the DC and microwave performance of doping less GaN HEMT" , Journal of Nanoelectronics and Optoelectronics , Volume 13, Number 7, pp. 971-979(9)  July 2018, DOI: https://doi.org/10.1166/jno.2018.2308, (SCI, (IF: 1.069) ).
    15. N. Sharma, C. Periasamy and N. Chaturvedi , "Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN HEMTs",  Journal of Nanoscience and Nanotechnology, Vol. 18(7),4580-4587 , July 2018, DOI: https://doi.org/10.1166/jnn.2018.15350, (SCI, (IF: 1.354) ).
    16. Sandeep Kumar Dhakad and Niketa Sharma, C. Periasamy and Nidhi Chaturvedi ,"Optimization of Ohmic Contacts on Thick and Thin AlGaN/GaN HEMTs Structures" , Superlattices and Microstructures, Elsevier, Vol. 111, pp.922-926, 2017. https://doi.org/10.1016/j.spmi.2017.03.060, (SCI, (IF: 2.658) ).
    17. Shaivalini Singh, Yogesh Kumar, Hemant Kumar, Sumit Vyas, C. Periasamy, Parthasarathi Chakrabarti , S. Jit , and Si-Hyun Park ,"A study of hydrothermally grown ZnO nanorod-based metal-semiconductor-metal UV detectors on glass substrates" , Nanomaterials and Nanotechnology, Vol. 7, pp. 1-5, 2017 https://DOI.org/10.1177/1847980417702144, (SCI, (IF: 3.116) ).
    18. Praveen K. Jain, Umesh Chand, C. Periasamy, Mohammad Salim ,"Switching Characteristics in TiO2/ZnO Double Layer Resistive Switching Memory Device" , Materials Research Express, Vol. 4, pp.1-6,  2017, https://doi.org/10.1088/2053-1591/aa731e, (SCI, (IF: 1.620) ).
    19. Tarun Varma , C.Periasamy and D Boolchandani ,"Performance Analyses of Schottky Diodes with Au/ Pd Contacts on n-ZnO thin films as UV detectors" , Superlattices and Microstructures, Elsevier,  Vol. 112, pp. 151-163, 2017,  DOI: https://doi.org/10.1016/j.spmi.2017.08.060, (SCI, (IF: 2.658) ).
    20.  Shashikant Sharma , TarunVarma , K. Asokan , C. Periasamy, Dharmendar Boolchandani ,"Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films " ,Journal of Nanoscience and Nanotechnology, Vol. 16, No. 3, pp. 1-6, 2015. DOI: https://doi.org/10.1166/jnn.2017.12379, (SCI, (IF: 1.354) ).
    21. Niketa Sharma, C. Periasamy and Nidhi Chaturvedi ,"Investigation of High-Temperature Effects on the Performance of AlGaN/GaN HEMTs" , Journal of Nanoelectronics and Optoelectronics, Vol. 11, pp. 694-701, 2016. https://doi.org/10.1166/jno.2016.1957, , (SCI, (IF: 1.069) ).
    22. Shashikant Sharma, A. Sumathi, and C. Periasamy, “Photodetection Properties of ZnO/Si Heterojunction Diode: A Simulation Study” IETE Technical Review, Vol. 34, pp. 83-90, Feb-2016 DOI: https://doi.org/10.1080/02564602.2016.1145558, (SCI, (IF: 2.200) ).
    23. Shashikant Sharma, C. Periasamy and P. Chakrabarti ,"Thickness Dependent Study of RF Sputtered ZnO Thin Films for Optoelectronic Device Applications" , Electronic Materials Letters, Vol. 11, No.6, pp. 1093-1101, 2015. DOI: https://doi.org/10.1007/s13391-015-4445-y,  (SCI, (IF: 3.017) ).
    24. Shashikant Sharma and C. Periasamy ,"Effect of Sputtering Power on Structural and Optical Properties of ZnO Thin Films Grown by RF Sputtering Technique" , Journal of Nanoelectronics and Optoelectronics,  Vol. 10, No. 6, pp.  205-210, 2015. DOI:  https://doi.org/10.1166/jno.2015.1732,  , (SCI, (IF: 1.069) ).
    25. Tarun Varma, Shashikant Sharma, C. Periasamy and D. Boolchandani,” Performance Analysis of Pt/ZnOSchottky Photodiode Using ATLAS”, Journal of Nanoelectronics& Optoelectronics, Vol. 10, No. 6, pp. 761-765, 2015. DOI: https://doi.org/10.1166/jno.2015.1836, , (SCI, (IF: 1.069) ).
    26. S. K. Bagaria and C. Periasamy ,"Magnetic Properties of Electroformed Ni and Ni-Fe for Micromagnetic MEMS Applications" , Journal of Superconductivity and Novel Magnetism , Vol. 28, No.11, pp. 3357-3363. 2015, DOI: https://doi.org/10.1007/s10948-015-3168-5 , (SCI, (IF: 1.506) ).

     

    1. Shashikant Sharma, Sumit Vyas, C. Periasamy and P. Chakrabarti ,"Structural and Optical Characterization of ZnO Thin Films for Optoelectronic Device Applications by RF Sputtering Technique" , Superlattices and Microstructures, (Elsevier) Vol 75, pp. 378-389,2014. https://doi.org/10.1016/j.spmi.2014.07.032, (SCI, (IF: 2.658) ).
    2. Shashikant Sharma and C Periasamy ,"A Study on the Electrical Characteristic of n-ZnO/p-Si Heterojunction Diode Prepared by Vacuum Coating Technique", Superlattices and Microstructures, (Elsevier) Vol 73, pp. 12-21,2014. https://doi.org/10.1016/j.spmi.2014.05.011, (SCI, (IF: 2.658) ).
    3. C. Periasamy and P. Chakrabarti ,"Effect of temperature on the electrical characteristics of nanostructured n-ZnO/p-Si heterojunction diode," Science of Advanced Materials, Vol. 5 No. 10, pp. 1384-1391, 2013.  DOI: https://doi.org/10.1166/sam.2013.1580, (SCI, (IF: 1.474) ).
    4. C. Periasamy and P. Chakrabarti ,"“Large-area and Nano-scale n-ZnO/p-Si Heterojunction Photodetectors”" , Journal of Vacuum Science & Technology-B, Vol. 29, pp. 051206-6, 2012. doi: https://dx.doi.org/10.1116/1.3628638, (SCI, (IF: 1.416) ).
    5. C. Periasamy and P.Chakrabarti, "Effect of Annealing on the Characteristics of Nanocrystalline ZnO Thin Films”, Science of Advanced Materials, Vol.3. pp. 73-79, 2011. DOI: https://doi.org/10.1166/sam.2011.1133, (SCI, (IF: 1.474) ).
    6. C. Periasamy and P. Chakrabarti ,"“Electrical and Optical Characterization of ZnO based Nano and Large-area Schottky Contacts,” Current Applied Physics, (Elsevier), Vol. 11, pp. 959-964, 2011, https://doi.org/10.1016/j.cap.2010.10.007, (SCI, (IF: 2.48) ).
    7. C. Periasamy and P. Chakrabarti ,"Time-dependent Degradation of Pt/ZnONanoneedle Rectifying Contact based Piezoelectric Nanogenerator”" , Journal of Applied Physics, Vol. 109, pp. 054306, 2011. DOI: http://dx.doi.org/10.1063/1.3553862, (SCI, (IF: 2.546) ).
    8. Runa Chakrabarti and C. Periasamy, ,"“Effect of Al Doping on Structural and Optoelectronics Properties of Sol-gel Derived Nanocrystalline ZnO Thin Film” " , Science of Advanced Materials, Vol. 3, pp. 276-283, 2011, https://doi.org/10.1166/sam.2011.1154, (SCI, (IF: 1.474) ).
    9. C. Periasamy and P. Chakrabarti, “Fabrication and Characterization of Au/ZnO Nano- Schottky Contacts,” Journal of Nanoelectronics and Optoelectronics, Vol. 5, pp. 38-42, 2010, DOI: https://doi.org/10.1166/jno.2010.1060,  , (SCI, (IF: 1.069) ).
    10. C. Periasamy , Rajiv Prakash and P. Chakrabarti , “Effect of Post Annealing on Structural and Optical Properties of ZnO Thin Films Deposited by Vacuum Coating Technique,” Journal of Materials Science: Materials in Electronics, Vol. 21, pp. 309-315, 2010, https://doi.org/10.1007/s10854-009-9912-5, (SCI, (IF: 2.478) )..
    11. C. Periasamy and P. Chakrabarti , ,"Structural and Electrical Properties of Metal Contacts on n-type ZnO Thin Film Deposited by Vacuum Coating Technique" , Journal of Vacuum Science & Technology-B, Vol. 27, pp. 2124-21, 2009. doi: http://dx.doi.org/10.1116/1.3196786. (SCI, (IF: 1.416) ).

    • Received Young Faculty Research Fellow, MeitY, Govt of India, 2015
    • Received Young Scientists, Science and Engineering Research Board (SERB), New Delhi-2016  

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    National Institute of Technology Calicut,
    NIT Campus P.O 673 601,
    Kozhikode, India.

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