DEPARTMENTS
Dr. Lintu Rajan
Dr. Lintu Rajan

Assistant Professor Grade I

Office Address:

IT-Lab : ITL 204, Department of Electronics and Communication Engineering National Institute of Technology Calicut, Kerala, India

Email ID:

lintu@nitc.ac.in

Home Address:

House no. FD-2. NITC Campus

  • B. Tech- Electronics and Communication Engineering (2005-2009)

  • M. Tech-VLSI Design (2009-2011)

  • Ph.D- Thesis titled"Design and Characterization of Zinc Oxide thin film based Schottky diodes for Hydrogen Sensing Applications" from NIT Jaipur (2012-2017)

  • Educational Qualifications

    • B. Tech- Electronics and Communication Engineering (2005-2009)

    • M. Tech-VLSI Design (2009-2011)

    • Ph.D- Thesis titled"Design and Characterization of Zinc Oxide thin film based Schottky diodes for Hydrogen Sensing Applications" from NIT Jaipur (2012-2017)

    Journals

    RESEARCH PUBLICATIONS IN SCI JOURNALS

    1.Hari, M.A. and Rajan, L.,” Performance Enhancement of Flexible and Self-Powered PVDF-ZnO Based Tactile Sensors”, IEEE Sensors journal, April2022,10.1109/JSEN.2022.3166706

    2. S. Ghosh and L. Rajan, "Room Temperature Hydrogen Sensor Using Schottky Contacted Zinc Oxide Thin-Film Transistor: A Comprehensive Investigation," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4637-4643, Sept. 2021.

    3. Ghosh, S. and Rajan, L., 2021. Zinc Oxide Thin-Film Transistor with Catalytic Electrodes for Hydrogen Sensing at Room Temperature. IEEE Transactions on Nanotechnology, vol.20, pp.303-310, March, 2021.

    4. Hari, M.A. and Rajan, L., 2021. Advanced Materials and Technologies for Touch Sensing in Prosthetic Limbs. IEEE Transactions on NanoBioscience, vol.20, no.3, pp.256-270, April 2021.

    5. Ghosh, S. and Rajan, L., 2020. Room Temperature Hydrogen Sensing Investigation of Zinc Oxide Schottky Thin-Film Transistors: Dependence on Film Thickness. IEEE Transactions on Electron Devices, 67(12), pp.5701-5709.

    6. Rajan, L., Periasamy, C. and Sahula, V., 2019. An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film With Radio Frequency Sputtered Gold Schottky Contacts. IEEE Sensors Journal, 19(9), pp.3232-3239.

    7. Rajan, L., Periasamy, C. and Sahula, V., 2016. Electrical characterization of Au/ZnO thin film Schottky diode on silicon substrate. Perspectives in Science, 8, pp.66-68.

    8. Rajan, L., Periasamy, C. and Sahula, V., 2016. Comprehensive study on electrical and hydrogen gas sensing characteristics of Pt/ZnO nanocrystalline thin film-based Schottky diodes grown on n-Si substrate using RF sputtering. IEEE Transactions on Nanotechnology, 15(2), pp.201-208.

    9. Rajan, L., Chinnamuthan, P., Krishnasamy, V. and Sahula, V., 2016. An investigation on electrical and hydrogen sensing characteristics of RF sputtered ZnO thin-film with palladium Schottky contacts. IEEE Sensors Journal, 17(1), pp.14-21.

     

    PUBLICATIONS IN NATIONAL / INTERNATIONAL CONFERENCES

    1. Hari, M.A.,Divya R.S, Rajan, L ,’Influence of Nanosilica in PVDF Thin Films for Sensing Applications’ IEEE International Symposium on Smart Electronic Systems (iSES) 2021.

    2. Hari, M.A., Rajan, L., Subash, C.K. and Varghese, S., 2021. Effect of nanoparticle size on the piezoelectric properties of PVDF based nanocomposite thin films. Materials Today: Proceedings.

    3. Ghosh, S. and Rajan, L., 2020. Influence of Gate Dielectrics on Electrical Characterization of ZnO Schottky Thin Film Transistor. Procedia Computer Science, 171, pp.1231-1240.

    4. Ghosh, S. and Rajan, L., 2020, February. Simulation Based Investigation of Sensing Current with Channel Length and Work Function Variation to Realize Hydrogen Detection. In 2020 International Conference on Innovative Trends in Information Technology (ICITIIT) (pp. 1-5). IEEE.

    5. Ghosh, S. and Rajan, L., 2020, February. ZnO Schottky Thin Film Transistors: Single Gate and Dual Gate Frameworks and Electrical Characterizations: A Comparative Analysis. In 2020 International Conference on Innovative Trends in Information Technology (ICITIIT) (pp. 1-6). IEEE.

    6. Varghese, A., Periasamy, C., Bhargava, L. and Rajan, L., 2019, October. Leakage Reduction and g m Enhancement in GaN HEMT for Enhanced Sensitivity in Fibrinogen Detection from Human Plasma. In 2019 IEEE SENSORS (pp. 1-4). IEEE.

    7. Rajan, L., Varghese, A., Periasamy, C. and Sahula, V., 2019, October. Device Design Space Exploration of Thin Film Hydrogen Sensor Based on Macro-model Generated Using Machine Learning. In 2019 IEEE SENSORS (pp. 1-4). IEEE.

    8. Rajan, L., Periasamy, C. and Sahula, V., 2017, March. Noble metal schottky contacts on nanocrystalline RF sputtered ZnO thin film. In 2017 Conference on Emerging Devices and Smart Systems (ICEDSS) (pp. 63-67). IEEE.

    9. Remya Ajai, A.S., Rajan, L. and Shiny, C., 2012, November. VLSI Implementation of Burrows Wheeler Transform for Memory Reduced Distributed Arithmetic Architectures. In Advances in Communication, Network, and Computing: Third International Conference, CNC 2012, Chennai, India, February 24-25, 2012, Revised Selected Papers (Vol. 108, p. 242). Springer.

    10. Rajan, L. and Sahula, V., Application of Concept Algebra in making inferences and role of Machine Learning.

    11. Rajan, L., Periasamy, C. and Sahula, V., 2015, December. Structural and optical characteristics of RF sputtered ZnO thinfilm on Si substrate for device applications. In 2015 Annual IEEE India Conference (INDICON) (pp. 1-4). IEEE.

    Ms. Sukanya Ghosh

    Mr.Arjun Hari

    Mr. James Raja

    Ms.Divya R.S